SUM55P06-19L-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SUM55P06-19L-E3


：	SUM55P06-19L-E3
：	金属氧化物半导体场效应晶体管
：	Vishay
：	Single P-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	60V
Drain-Source On Resistance-Max:	0.019Ω
Rated Power Dissipation:	3.75\|W
Qg Gate Charge:	115nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

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70394.24

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