STL18N60M2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STL18N60M2


：	STL18N60M2
：	金属氧化物半导体场效应晶体管
：	STMicroelectronics
：	600 V 0.278 Ohm
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	308mΩ
Rated Power Dissipation:	57\|W
Qg Gate Charge:	21.5nC
Package Style:	POWER FLAT
Mounting Method:	Surface Mount

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