STS8DN3LLH5 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STS8DN3LLH5


：	STS8DN3LLH5
：	金属氧化物半导体场效应晶体管
：	STMicroelectronics
：	Dual Channel 30
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	30V
Drain-Source On Resistance-Max:	19mΩ
Rated Power Dissipation:	2.7\|W
Qg Gate Charge:	5.4nC
Package Style:	SOIC-8
Mounting Method:	Surface Mount

PDF(1)

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