STF21N65M5 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STF21N65M5


：	STF21N65M5
：	金属氧化物半导体场效应晶体管
：	STMicroelectronics
：	N-Channel 710 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	190mΩ
Rated Power Dissipation:	30\|W
Qg Gate Charge:	50nC
Package Style:	TO-220FP (TO-220FPAB)
Mounting Method:	Through Hole

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