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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 1.5 V, 1.55 V |
| Continuous Collector Current at 25 C: | 100 A, 150 A |
| Gate-Emitter Leakage Current: | 100 nA |
| Pd - Power Dissipation: | 20 mW |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tray |
| Brand: | Infineon Technologies |
| Maximum Gate Emitter Voltage: | 20 V |
| Mounting Style: | Chassis |
| Product Type: | IGBT Modules |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Part # Aliases: | FP150R12N3T7 SP004145204 |
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571.2
571.2
