IXTY1R6N50D2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTY1R6N50D2


：	IXTY1R6N50D2
：	Mosfets
：	IXYS
：	N-Channel 500 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	500V
Drain-Source On Resistance-Max:	2.3mΩ
Rated Power Dissipation:	100\|W
Qg Gate Charge:	23.7nC
Package Style:	TO-252AA
Mounting Method:	Surface Mount

PDF(1)

48.7385

43.7025

1092.5625

42.1218

3159.135

250

40.3992

10099.8

750

38.9604

29220.3

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