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STB6N80K5

  • STB6N80K5
  • STB6N80K5
  • STB6N80K5
  • STB6N80K5
STB6N80K5
Mosfets
STMicroelectronics
N-Channel 800 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:1.6Ω
Rated Power Dissipation:85W
Qg Gate Charge:13nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:4.5A
Turn-on Delay Time:16ns
Turn-off Delay Time:28.5ns
Rise Time:7.5ns
Fall Time:16ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:270pF
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
PDF(1)

1000

21.2787

21278.7

2000

17.256

34512

3000

17.1041

51312.3

4000

16.9622

67848.8

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