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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STP20N65M5
STP20N65M5
:
STP20N65M5
:
Mosfets
:
STMicroelectronics
:
650 V 0.160 Ohm
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
650V
Drain-Source On Resistance-Max:
0.19Ω
Rated Power Dissipation:
130|W
Qg Gate Charge:
36nC
Package Style:
TO-220-3 (TO-220AB)
PDF(1)
1000
34.2182
34218.2
2000
27.3179
54635.8
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