STB11N65M5 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STB11N65M5


：	STB11N65M5
：	Mosfets
：	STMicroelectronics
：	N-Channel 710 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	480mΩ
Rated Power Dissipation:	85\|W
Qg Gate Charge:	17nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

1000

22.4238

22423.8

2000

18.2592

36518.4

3000

18.1173

54351.9

4000

17.9754

71901.6

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