STB100N10F7 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STB100N10F7


：	STB100N10F7
：	Mosfets
：	STMicroelectronics
：	N-channel 100 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	8mΩ
Rated Power Dissipation:	150\|W
Qg Gate Charge:	61nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

1000

27.4597

27459.7

2000

22.2819

44563.8

3000

21.9982

65994.6

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