SI8800EDB-T2-E1 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI8800EDB-T2-E1


：	SI8800EDB-T2-E1
：	Mosfets
：	Vishay
：	Single N-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	0.08Ω
Rated Power Dissipation:	0.9\|W
Qg Gate Charge:	3.2nC
Package Style:	MICRO-FOOT
Mounting Method:	Surface Mount

PDF(1)

3000

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21126.6

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12000

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37936.8

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