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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI4421DY-T1-E3
SI4421DY-T1-E3
:
SI4421DY-T1-E3
:
Mosfets
:
Vishay
:
Single P-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
P-Ch
Drain-to-Source Voltage [Vdss]:
20V
Drain-Source On Resistance-Max:
8.75mΩ
Rated Power Dissipation:
1.5|W
Qg Gate Charge:
125nC
Package Style:
SOIC-8
Mounting Method:
Surface Mount
PDF(1)
2500
17.1165
42791.25
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