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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 12.9mΩ |
| Rated Power Dissipation: | 106W |
| Qg Gate Charge: | 37nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 60A |
| Turn-on Delay Time: | 20ns |
| Turn-off Delay Time: | 37ns |
| Rise Time: | 15ns |
| Fall Time: | 10ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | TrenchMOS |
| Input Capacitance: | 2420pF |
| Package Style: | SOT-669 |
| Mounting Method: | Surface Mount |
1500
9.1355
13703.25
3000
7.4787
22436.1
4500
7.4028
33312.6
6000
7.3369
44021.4
