IXTT6N120 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTT6N120


：	IXTT6N120
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	1200V
Drain-Source On Resistance-Max:	2.6mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	56nC
Package Style:	TO-268 (D3PAK)
Mounting Method:	Surface Mount

PDF(1)

163.1777

4895.331

138.4437

12459.933

120

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16440.588

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39766.95

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