TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 450mΩ |
Rated Power Dissipation: | 715mW |
Qg Gate Charge: | 1.9nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 1.4A |
Turn-on Delay Time: | 4ns |
Turn-off Delay Time: | 26ns |
Rise Time: | 5ns |
Fall Time: | 9ns |
Operating Temp Range: | -65°C to +150°C |
Gate Source Threshold: | 0.95V |
Technology: | Si |
Height - Max: | 0.4mm |
Length: | 1.05mm |
Input Capacitance: | 127pF |
Package Style: | DFN-3 |
Mounting Method: | Surface Mount |
10000
0.9635
9635
20000
0.7839
15678
30000
0.7811
23433
40000
0.7783
31132
50000
0.7768
38840