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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 45mΩ |
| Rated Power Dissipation: | 32W |
| Qg Gate Charge: | 9.2nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 15.4A |
| Turn-on Delay Time: | 4.3ns |
| Turn-off Delay Time: | 8.4ns |
| Rise Time: | 5.1ns |
| Fall Time: | 5.4ns |
| Operating Temp Range: | -55°C to +175°C |
| Technology: | TrenchMOS |
| Input Capacitance: | 401pF |
| Mounting Method: | Surface Mount |
1500
12.2443
18366.45
3000
9.9582
29874.6
4500
9.8824
44470.8
6000
9.8166
58899.6
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