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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 4.1Ω |
| Rated Power Dissipation: | 350mW |
| Qg Gate Charge: | 0.55nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 230mA |
| Turn-on Delay Time: | 19ns |
| Turn-off Delay Time: | 65ns |
| Rise Time: | 30ns |
| Fall Time: | 38ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.9V |
| Technology: | Si |
| Input Capacitance: | 31pF |
| Package Style: | SOT-23 (SC-59,TO-236) |
| Mounting Method: | Surface Mount |
3000
0.8004
2401.2
9000
0.6638
5974.2
15000
0.661
9915
45000
0.6437
28966.5
75000
0.6401
48007.5
