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IXTA08N100D2

  • IXTA08N100D2
  • IXTA08N100D2
IXTA08N100D2
Mosfets
IXYS
N-Channel 1000
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:1000V
Drain-Source On Resistance-Max:21Ω
Rated Power Dissipation:60|W
Qg Gate Charge:14.6nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
PDF(1)

50

23.1432

1157.16

200

19.8399

3967.98

500

19.2623

9631.15

1250

18.8367

23545.875

2000

18.543

37086

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