IXTH50P10 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH50P10


：	IXTH50P10
：	Mosfets
：	IXYS
：	P-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	55mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	140nC
Package Style:	TO-247-3
Mounting Method:	Through Hole

127.6625

3829.875

109.1196

9820.764

150

107.1032

16065.48

300

104.5192

31355.76

600

102.0772

61246.32

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