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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 900V |
| Drain-Source On Resistance-Max: | 28mΩ |
| Rated Power Dissipation: | 3.7W |
| Qg Gate Charge: | 200nC |
| Gate-Source Voltage-Max [Vgss]: | 19V |
| Drain Current: | 9.8A |
| Turn-on Delay Time: | 39ns |
| Turn-off Delay Time: | 58ns |
| Rise Time: | 52ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.6V |
| Technology: | SiC |
| Input Capacitance: | 4415pF |
| Package Style: | TO-263-7 (D2PAK7) |
| Mounting Method: | Surface Mount |
800
354.7436
283794.88
