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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 1Ω |
| Rated Power Dissipation: | 3.1W |
| Qg Gate Charge: | 16nC |
| Gate-Source Voltage-Max [Vgss]: | 10V |
| Drain Current: | 5.2A |
| Turn-on Delay Time: | 4.2ns |
| Turn-off Delay Time: | 18ns |
| Rise Time: | 31ns |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2V |
| Technology: | Si |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 360pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
23.2976
18638.08
1600
18.9806
30368.96
2400
18.8387
45212.88
3200
18.6968
59829.76
