IXTH160N10T Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH160N10T


：	IXTH160N10T
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	7mΩ
Rated Power Dissipation:	430\|W
Qg Gate Charge:	132nC
Package Style:	TO-247-3
Mounting Method:	Flange Mount

PDF(1)

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6003.351

150

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9833.82

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62.6811

37608.66

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