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IPS70R360P7SAKMA1

  • IPS70R360P7SAKMA1
  • IPS70R360P7SAKMA1
IPS70R360P7SAKMA1
Mosfets
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:700V
Drain-Source On Resistance-Max:0.36Ω
Rated Power Dissipation:59.5W
Qg Gate Charge:16.4nC
Gate-Source Voltage-Max [Vgss]:16V
Drain Current:12.5A
Turn-on Delay Time:19ns
Turn-off Delay Time:100ns
Rise Time:8ns
Fall Time:18ns
Operating Temp Range:-40°C to +150°C
Gate Source Threshold:3V
Technology:CoolMOS
Input Capacitance:517pF
Package Style: TO-251 (IPAK)
Mounting Method:Through Hole
PDF(1)

75

9.4843

711.3225

3000

7.7617

23285.1

4500

7.6957

34630.65

6000

7.6198

45718.8

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