TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 500V |
Drain-Source On Resistance-Max: | 0.85Ω |
Rated Power Dissipation: | 90W |
Qg Gate Charge: | 18nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 6.5A |
Turn-on Delay Time: | 17ns |
Turn-off Delay Time: | 43ns |
Rise Time: | 80ns |
Fall Time: | 60ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 5V |
Technology: | Si |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 565pF |
2500
10.7421
26855.25
5000
8.6636
43318
7500
8.5977
64482.75