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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 12mΩ |
| Rated Power Dissipation: | 105W |
| Qg Gate Charge: | 35.2nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 61.8A |
| Turn-on Delay Time: | 19.3ns |
| Turn-off Delay Time: | 43.2ns |
| Rise Time: | 29.4ns |
| Fall Time: | 22ns |
| Operating Temp Range: | -55°C to +175°C |
| Technology: | TrenchMOS |
| Input Capacitance: | 1550pF |
| Package Style: | SOT-669 |
| Mounting Method: | Surface Mount |
1500
15.9007
23851.05
3000
12.8207
38462.1
4500
12.6791
57055.95
