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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 27mΩ |
| Rated Power Dissipation: | 157W |
| Qg Gate Charge: | 33nC |
| Gate-Source Voltage-Max [Vgss]: | 15V |
| Drain Current: | 46A |
| Turn-on Delay Time: | 30ns |
| Turn-off Delay Time: | 96ns |
| Rise Time: | 86ns |
| Fall Time: | 46ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.5V |
| Technology: | TrenchMOS |
| Input Capacitance: | 3270pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
13.6805
10944.4
1600
11.2428
17988.48
2400
11.1012
26642.88
3200
11.0354
35313.28
4000
10.9596
43838.4
