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| TYPE | DESCRIPTION |
| Manufacturer: | ROHM Semiconductor |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220FM-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 15 A |
| Rds On - Drain-Source Resistance: | 315 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V, - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 40 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 60 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | ROHM Semiconductor |
| Configuration: | Single |
| Fall Time: | 45 ns |
| Product Type: | MOSFET |
| Rise Time: | 55 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs |
| Transistor Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 105 ns |
| Typical Turn-On Delay Time: | 30 ns |
1
6.98
6.98
10
6.28
62.8
25
5.94
148.5
100
5.14
514
500
4.38
2190
1000
3.68
3680
2000
3.46
6920
5000
3.34
16700
