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| TYPE | DESCRIPTION |
| Manufacturer: | Advanced Semiconductor, Inc. |
| Product Category: | RF Bipolar Transistors |
| RoHS: | Details |
| Transistor Type: | Bipolar Power |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Operating Frequency: | 108 MHz |
| DC Collector/Base Gain hfe Min: | 20 |
| Collector- Emitter Voltage VCEO Max: | 25 V |
| Emitter- Base Voltage VEBO: | 4 V |
| Continuous Collector Current: | 16 A |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 200 C |
| Mounting Style: | Screw Mount |
| Package / Case: | M177 |
| Packaging: | Tray |
| Brand: | Advanced Semiconductor, Inc. |
| Pd - Power Dissipation: | 230 W |
| Product Type: | RF Bipolar Transistors |
| Subcategory: | Transistors |
| Type: | RF Bipolar Power |
| Unit Weight: | 2 oz |
1
122.42
122.42
10
114.98
1149.8
25
111.28
2782
100
107.68
10768
