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| TYPE | DESCRIPTION |
| Manufacturer: | Advanced Semiconductor, Inc. |
| Product Category: | RF Bipolar Transistors |
| RoHS: | Details |
| Transistor Type: | Bipolar Power |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Operating Frequency: | 30 MHz |
| DC Collector/Base Gain hfe Min: | 15 |
| Collector- Emitter Voltage VCEO Max: | 55 V |
| Emitter- Base Voltage VEBO: | 4 V |
| Continuous Collector Current: | 40 A |
| Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 200 C |
| Mounting Style: | Screw Mount |
| Package / Case: | M177 |
| Packaging: | Tray |
| Brand: | Advanced Semiconductor, Inc. |
| Pd - Power Dissipation: | 330 W |
| Product Type: | RF Bipolar Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | Transistors |
| Type: | RF Bipolar Power |
| Unit Weight: | 0.723969 oz |
1
165.58
165.58
10
157.3
1573
25
153.16
3829
100
150.2
15020
