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| TYPE | DESCRIPTION |
| Manufacturer: | Qorvo |
| Product Category: | RF JFET Transistors |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN-on-SiC |
| Operating Frequency: | 1 GHz to 1.1 GHz |
| Gain: | 22.9 dB |
| Id - Continuous Drain Current: | 28 A |
| Output Power: | 1.5 kW |
| Maximum Drain Gate Voltage: | 225 V |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 85 C |
| Pd - Power Dissipation: | 758 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | NI-1230-4 |
| Packaging: | Tray |
| Application: | Avionics, IFF Transponders |
| Brand: | Qorvo |
| Configuration: | Dual Gate Dual Drain |
| Development Kit: | QPD1025LEVB1 |
| Moisture Sensitive: | Yes |
| Product Type: | RF JFET Transistors |
| Series: | QPD1025L |
| Factory Pack Quantity: Factory Pack Quantity: | 18 |
| Subcategory: | Transistors |
| Unit Weight: | 1.399148 oz |
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2912.94
2912.94
18
market price
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