取消
| TYPE | DESCRIPTION |
| Manufacturer: | Advanced Semiconductor, Inc. |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Id - Continuous Drain Current: | 16 A |
| Vds - Drain-Source Breakdown Voltage: | 65 V |
| Operating Frequency: | 175 MHz |
| Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 200 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | 221-11-3 |
| Packaging: | Tray |
| Brand: | Advanced Semiconductor, Inc. |
| Configuration: | Single |
| Pd - Power Dissipation: | 300 W |
| Product Type: | RF MOSFET Transistors |
| Subcategory: | MOSFETs |
| Vgs - Gate-Source Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
1
122.42
122.42
10
114.98
1149.8
25
111.28
2782
-36DP-05V(51).jpg "DF12NB(3.0)-36DP-0.5V(51)")
(SN).jpg "BM20B-SRDS-G-TFC(LF)(SN)")
