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| TYPE | DESCRIPTION |
| Manufacturer: | Toshiba |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOP-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 320 A |
| Rds On - Drain-Source Resistance: | 770 uOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Qg - Gate Charge: | 74 nC |
| Minimum Operating Temperature: | - |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 170 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Toshiba |
| Configuration: | Single |
| Fall Time: | 15 ns |
| Product Type: | MOSFET |
| Rise Time: | 9.6 ns |
| Series: | UMOS VIII-H |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Subcategory: | MOSFETs |
| Typical Turn-Off Delay Time: | 89 ns |
| Typical Turn-On Delay Time: | 23 ns |
| Part # Aliases: | TPHR9003NL1,LQ(M |
1
3.36
3.36
10
3.02
30.2
100
2.36
236
500
1.942
971
1000
1.437
1437
5000
1.397
6985
