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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSDSON-8-33 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Id - Continuous Drain Current: | 40 A |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 17 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 68 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Fall Time: | 5 ns |
| Product Type: | MOSFET |
| Rise Time: | 1 ns |
| Series: | IAUZ40N10 |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 6 ns |
| Typical Turn-On Delay Time: | 4 ns |
| Part # Aliases: | IAUZ40N10S5N130 SP002143558 |
| Unit Weight: | 0.003966 oz |
1
2.72
2.72
10
2.4
24
100
1.897
189.7
500
1.562
781
1000
1.376
1376
5000
1.376
6880
