SUD19P06-60L-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SUD19P06-60L-E3


：	SUD19P06-60L-E3
：	金属氧化物半导体场效应晶体管
：	Vishay
：	P-CHANNEL 60-V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	60V
Drain-Source On Resistance-Max:	0.06Ω
Rated Power Dissipation:	46\|W
Qg Gate Charge:	26nC
Package Style:	TO-252AA
Mounting Method:	Surface Mount

PDF(1)

2000

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27449.8

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