STP11NM60FDFP Mosfets_Inventory of electronic components_Electronic equipment_Power management

STP11NM60FDFP


：	STP11NM60FDFP
：	金属氧化物半导体场效应晶体管
：	STMicroelectronics
：	N-Channel 600 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	0.45Ω
Rated Power Dissipation:	35\|W
Qg Gate Charge:	40nC
Package Style:	TO-220FP (TO-220FPAB)
Mounting Method:	Surface Mount

PDF(1)

59.0841

2954.205

150

50.603

7590.45

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49.7416

12435.4

750

48.0191

36014.325

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59124.625

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