STF42N65M5 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STF42N65M5


：	STF42N65M5
：	金属氧化物半导体场效应晶体管
：	STMicroelectronics
：	N-Channel 650 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	79mΩ
Rated Power Dissipation:	40\|W
Qg Gate Charge:	100nC
Package Style:	TO-220FP (TO-220FPAB)
Mounting Method:	Flange Mount

PDF(1)

120.1845

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96.18

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