STF11N65M5 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STF11N65M5


：	STF11N65M5
：	金属氧化物半导体场效应晶体管
：	STMicroelectronics
：	N-Channel 650 9
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	480mΩ
Rated Power Dissipation:	25\|W
Qg Gate Charge:	17nC
Package Style:	TO-220FP (TO-220FPAB)
Mounting Method:	Through Hole

PDF(1)

30.763

1538.15

150

26.5984

3989.76

500

25.5952

12797.6

1000

25.1596

25159.6

2000

24.582

49164

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