STB42N65M5 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STB42N65M5


：	STB42N65M5
：	金属氧化物半导体场效应晶体管
：	STMicroelectronics
：	N-Channel 650 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	650V
Drain-Source On Resistance-Max:	0.079Ω
Rated Power Dissipation:	190\|W
Qg Gate Charge:	100nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

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