SIHB12N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHB12N60E-GE3


：	SIHB12N60E-GE3
：	金属氧化物半导体场效应晶体管
：	Vishay
：	MOSFET 600V 380
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	380mΩ
Rated Power Dissipation:	147\|W
Qg Gate Charge:	29nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

500

28.8985

14449.25

1000

23.5788

23578.8

1500

23.2951

34942.65

2000

23.1432

46286.4

Texas Instruments

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IC COMP 4.5NS R-R HS SOT23-6

EDAC

745-062-520-206

745 Series 62 Positions Dual Row 0.100" (2.54mm) Ultra-Mate Card Edge Connector

GardTec

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80 mm 45 ppi Polyurethane Foam Fan Filter Media

Churod Electronics

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Vishay

SIHB12N60E-GE3

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Diodes Incorporated

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Everspin Technologies

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MRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM

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Circular MIL Spec Strain Reliefs & Adapters Strain Relief Clamp

NorComp

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Wurth Elektronik

7447840112G

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Molex

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4116R-001-470

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