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SI8487DB-T1-E1

  • SI8487DB-T1-E1
  • SI8487DB-T1-E1
SI8487DB-T1-E1
金属氧化物半导体场效应晶体管
Vishay
-30V 7.7A 0.031
-
Reel
-
TYPEDESCRIPTION
Fet Type:P-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:30V
Drain-Source On Resistance-Max:31mΩ
Rated Power Dissipation:1.1W
Qg Gate Charge:52nC
Gate-Source Voltage-Max [Vgss]:12V
Drain Current:4.9A
Turn-on Delay Time:7ns
Turn-off Delay Time:290ns
Rise Time:10ns
Fall Time:60ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:1.2V
Input Capacitance:2240pF
Package Style: MICRO-FOOT
Mounting Method:Surface Mount
PDF(1)

3000

6.5407

19622.1

6000

6.181

37086

9000

5.8973

53075.7

12000

5.6034

67240.8

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