SI1012X-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI1012X-T1-GE3


：	SI1012X-T1-GE3
：	金属氧化物半导体场效应晶体管
：	Vishay
：	Single N-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	0.7Ω
Rated Power Dissipation:	250\|mW
Qg Gate Charge:	750nC
Package Style:	SC-89
Mounting Method:	Surface Mount

PDF(1)

3000

2.8609

8582.7

6000

2.3248

13948.8

9000

2.3177

20859.3

12000

2.3005

27606

15000

2.2832

34248

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