RS1G180MNTB Mosfets_Inventory of electronic components_Electronic equipment_Power management

RS1G180MNTB


：	RS1G180MNTB
：	金属氧化物半导体场效应晶体管
：	ROHM
：	RS1G180MN Serie
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	40V
Drain-Source On Resistance-Max:	7mΩ
Rated Power Dissipation:	3\|W
Qg Gate Charge:	19.5nC
Package Style:	HSOP-8
Mounting Method:	Surface Mount

2500

8.6636

21659

5000

7.0956

35478

7500

7.0198

52648.5

10000

6.944

69440

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