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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 15mΩ |
| Rated Power Dissipation: | 300W |
| Qg Gate Charge: | 90nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 75A |
| Turn-on Delay Time: | 25ns |
| Turn-off Delay Time: | 95ns |
| Rise Time: | 65ns |
| Fall Time: | 50ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | TrenchMOS |
| Input Capacitance: | 4900pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
18.0552
14444.16
1600
14.7577
23612.32
2400
14.6161
35078.64
3200
14.4645
46286.4
