TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 75mΩ |
Rated Power Dissipation: | 490mW |
Qg Gate Charge: | 4.1nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 2.7A |
Turn-on Delay Time: | 6ns |
Turn-off Delay Time: | 12ns |
Rise Time: | 12ns |
Fall Time: | 5ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.6V |
Technology: | TrenchMOS |
Input Capacitance: | 160pF |
Package Style: | TO-236AB |
Mounting Method: | Surface Mount |
3000
2.2832
6849.6
6000
1.8647
11188.2
12000
1.8403
22083.6
15000
1.8232
27348