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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 210mΩ |
| Rated Power Dissipation: | 335mW |
| Qg Gate Charge: | 3.3nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 1.2A |
| Turn-on Delay Time: | 7ns |
| Turn-off Delay Time: | 35ns |
| Rise Time: | 26ns |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.7V |
| Technology: | Si |
| Input Capacitance: | 365pF |
| Package Style: | SOT-23 (SC-59,TO-236) |
| Mounting Method: | Surface Mount |
3000
1.6641
4992.3
9000
1.3802
12421.8
12000
1.3766
16519.2
30000
1.3437
40311
45000
1.3379
60205.5
