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PMDT670UPE,115

  • PMDT670UPE,115
  • PMDT670UPE,115
： PMDT670UPE,115
： Mosfets
： Nexperia
： P-Channel 20 V
： -
： Reel
： -
TYPEDESCRIPTION
Fet Type:Dual P-Ch
No of Channels:2
Drain-to-Source Voltage [Vdss]:20V
Drain-Source On Resistance-Max:850mΩ
Rated Power Dissipation:330mW
Qg Gate Charge:0.76nC
Gate-Source Voltage-Max [Vgss]:8V
Drain Current:550mA
Turn-on Delay Time:18ns
Turn-off Delay Time:80ns
Rise Time:30ns
Fall Time:72ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:0.8V
Technology:TrenchMOS
Input Capacitance:87pF
Package Style: SOT-666
Mounting Method:Surface Mount
PDF(1)

4000

1.5393

6157.2

8000

1.2591

10072.8

16000

1.239

19824

20000

1.2362

24724

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