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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 513mΩ |
| Rated Power Dissipation: | 3W |
| Qg Gate Charge: | 15nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2.5A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 19ns |
| Rise Time: | 20ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 1.8mm |
| Length: | 6.7mm |
| Input Capacitance: | 601pF |
| Mounting Method: | Surface Mount |
4000
21.5647
86258.8
