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IXFK200N10P


：	IXFK200N10P
：	Mosfets
：	IXYS
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	7.5mΩ
Rated Power Dissipation:	830\|W
Qg Gate Charge:	235nC
Package Style:	TO-264
Mounting Method:	Flange Mount

PDF(1)

329.8006

8245.015

275.1648

13758.24

270.1389

20260.4175

100

266.5419

26654.19

125

263.816

32977

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