IRL640SPBF Mosfets_Inventory of electronic components_Electronic equipment_Power management

IRL640SPBF


：	IRL640SPBF
：	金属氧化物半导体场效应晶体管
：	Vishay
：	Single N-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	200V
Drain-Source On Resistance-Max:	0.18Ω
Rated Power Dissipation:	125\|W
Qg Gate Charge:	66nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

17.8236

15.959

638.36

150

15.3816

2307.24

500

14.804

7402

2000

14.2365

28473

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