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IRFP7430PBF

  • IRFP7430PBF
  • IRFP7430PBF
  • IRFP7430PBF
  • IRFP7430PBF
IRFP7430PBF
金属氧化物半导体场效应晶体管
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:40V
Drain-Source On Resistance-Max:1.3mΩ
Rated Power Dissipation:366|W
Qg Gate Charge:300nC
Package Style: TO-247AC
Mounting Method:Through Hole
PDF(1)

1

41.5443

41.5443

30

37.3796

1121.388

125

35.6571

4457.1375

300

34.7958

10438.74

1250

33.2151

41518.875

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